Plasma etch is a critical process in semiconductor manufacturing. Accurate automatic detection of the end of the etch process is quite important for reliable wafer processing.
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Figures 1 and 2 show two techniques for endpoint detection using interferometry sensor data from plasma etching.
We formulate the above two problems in a general framework of segmental semi-Markov models, which extends the standard hidden Markov model (HMM) to allow explicit state duration (semi-Markov model, e.g., Ferguson 1980), and segmental observations (the segmental model, e.g., Holmes and Russell 1999).
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(1) |
For example, in the context of change-point detection in Fig. 1,
we have two states: ``pre-change-point",
and ``post-change-point".
Similarly,
for pattern matching in Fig. 2, if we approximate the pattern
as a sequence of linear segments (by piecewise linear segmentation, see Fig.
3),
state corresponds to the
-th segment of the pattern.
When the states of the Markov model are not directly observed (i.e.,
hidden), the states
must be inferred from the observed data
. For standard hidden Markov model (HMM),
there exist efficient algorithms
to compute
(forward-backward algorithm), and the most likely state
sequence
,
which maximizes
(known as the Viterbi algorithm).
These algorithms can be extended to our segmental semi-Markov models.
In the next section, we give a Viterbi-like algorithm to compute the most
likely state sequence in a segmental semi-Markov model.